| PART |
Description |
Maker |
| TH50VSF4682AASB TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| CMLM0605 CMLM0605BK |
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SMD Module PNP Low VCE(SAT) & Low VF Schottky Diode
MULTI DISCRETE MODULE⑩ SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE?/a> SURFACE MOUNT LOW VCE (SAT) SILICON PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| FMB3906NL MMPQ3906NL |
PNP Multi-Chip General Purpose Amplifier
|
Fairchild Semiconductor
|
| FMB2907A FFB2907A MMPQ2907A |
PNP Multi-Chip General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| 585-3211 585-3213 585-3215 585-3221 585-3225 585-3 |
Multi-Chip BASED LED T1 3/4 Bi-Pin
585 SERIES BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| NN5099K |
10.5V; 1481mW; silicon multi chip IC. For color TV
IC DIVISION
|
Panasonic
ETC[ETC]
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| TH50VSF3583AASB |
(TH50VSF3582AASB / TH50VSF3583AASB) MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| CMLM7405 |
MULTI DISCRETE MODULESURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
|
